The I RF P260NPBF is a MOSFET (Metal-Oxide-Semiconductor Field-Effect transistor ) produced by International Rectifier, which is now part of Infineon Technologies. It is designed primarily for power switching applications, such as in power supplies, motor control circuits, and audio amplifiers.
Package and Pin Function Specifications
The IRFP260NPBF typically comes in a TO-220 package, a widely used package for high-power devices, which features 3 pins for its basic function. Below, I will list the details for the pins and their functions in the TO-220 package.
Pin Functions of the IRFP260NPBF (TO-220 Package) Pin No. Pin Name Description 1 Gate (G) The gate is used to control the switching of the MOSFET. A voltage between the gate and source (Vgs) controls the flow of current from drain to source. 2 Drain (D) The drain is the terminal where the current exits the MOSFET. It connects to the load. The current flows from drain to source when the MOSFET is on. 3 Source (S) The source is the terminal where current enters the MOSFET. It is usually connected to the lower voltage or ground in the circuit.These pins control the basic functionality of the IRFP260NPBF as a power MOSFET, where the gate controls the switching, the source is typically the ground or lower voltage, and the drain connects to the load where current flows.
Circuit Principle
The IRFP260NPBF operates as a N-channel power MOSFET. In general, the operation follows these principles:
Gate-Source Voltage (Vgs): When a positive voltage is applied to the gate (relative to the source), it creates an electric field that allows current to flow from the drain to the source. Drain-Source Current (Ids): The current flows from the drain to the source when the MOSFET is "on," which happens when the gate-source voltage exceeds a certain threshold (Vgs(th)). Switching: This MOSFET can switch between conducting and non-conducting states (on/off), allowing it to control power flow in high-speed switching applications.In typical use, a gate driver circuit is used to provide the necessary voltage to the gate to turn the MOSFET on or off. The IRFP260NPBF is often used in high-power applications, such as in DC-DC converters, power inverters, and motor drives, where the MOSFET is used to switch large currents.
Pin Functions: 3-pin Configuration (TO-220)
In the case of the IRFP260NPBF in a TO-220 package, the transistor has 3 pins. The key functions of each pin are as follows:
Gate (G): Controls the switching action of the MOSFET. It requires a voltage signal to turn the MOSFET on or off. Drain (D): The pin where the load current exits the MOSFET. This pin is connected to the high-voltage side of the circuit. Source (S): The pin where the current enters the MOSFET. Typically, this pin is connected to the lower voltage or ground.These 3 pins are the only ones involved in the core operation of the MOSFET, as the IRFP260NPBF is a 3-terminal device. No additional pins are necessary for standard operation.
Frequently Asked Questions (FAQ) for IRFP260NPBF
Here’s a FAQ section with 20 questions and answers related to the IRFP260NPBF:
Q: What is the maximum gate-source voltage for the IRFP260NPBF? A: The maximum gate-source voltage (Vgs) for the IRFP260NPBF is ±20V. Q: What is the maximum drain-source voltage (Vds) for the IRFP260NPBF? A: The maximum drain-source voltage (Vds) for the IRFP260NPBF is 200V. Q: What is the threshold voltage (Vgs(th)) for the IRFP260NPBF? A: The threshold voltage (Vgs(th)) is between 2.0V and 4.0V, which is the voltage at which the MOSFET begins to turn on. Q: What is the maximum continuous drain current for the IRFP260NPBF? A: The maximum continuous drain current (Ids) is 50A, depending on the case and cooling conditions. Q: What is the gate charge of the IRFP260NPBF? A: The total gate charge (Qg) is typically around 140nC (nano-Coulombs). Q: Can the IRFP260NPBF be used in high-frequency switching applications? A: Yes, the IRFP260NPBF is suitable for high-frequency applications, although for even higher frequencies, specialized MOSFETs might be required. Q: What package is the IRFP260NPBF available in? A: The IRFP260NPBF is available in the TO-220 package. Q: What is the thermal resistance (junction to case) for the IRFP260NPBF? A: The thermal resistance (junction to case) is typically 0.5°C/W. Q: What type of device is the IRFP260NPBF? A: The IRFP260NPBF is an N-channel power MOSFET.Q: What is the maximum power dissipation for the IRFP260NPBF?
A: The maximum power dissipation is around 150W, depending on the operating conditions.Q: Is the IRFP260NPBF suitable for motor control applications?
A: Yes, the IRFP260NPBF is often used in motor control applications due to its high current-handling capabilities.Q: What is the minimum source-drain voltage for the IRFP260NPBF to function properly?
A: The MOSFET will typically need a voltage of at least 10V to fully switch on.Q: How does the IRFP260NPBF dissipate heat?
A: The IRFP260NPBF dissipates heat primarily through the package’s junction-to-case thermal resistance, so proper heatsinking is recommended.Q: What is the typical Rds(on) for the IRFP260NPBF?
A: The typical Rds(on) (on-state resistance) is around 0.04Ω.Q: What is the IRFP260NPBF typically used for?
A: The IRFP260NPBF is typically used in power electronics such as DC-DC converters, inverters, motor drives, and power amplifiers.Q: Can the IRFP260NPBF be used in automotive applications?
A: Yes, it can be used in automotive applications, provided the voltage and current ratings match the requirements of the application.Q: What type of gate drive voltage is required for the IRFP260NPBF?
A: The IRFP260NPBF typically requires a gate drive voltage of 10V to fully switch on.Q: Is the IRFP260NPBF a unipolar or bipolar device?
A: The IRFP260NPBF is a unipolar device, as it is an N-channel MOSFET.Q: Can the IRFP260NPBF be used in parallel to handle higher currents?
A: Yes, multiple IRFP260NPBF devices can be used in parallel to handle higher currents, but proper balancing and thermal management are essential.Q: How should the gate of the IRFP260NPBF be driven for optimal performance?
A: The gate should be driven with a voltage higher than the threshold voltage (Vgs(th)), typically around 10V, to ensure fast switching and minimal conduction losses.Final Notes
This IRFP260NPBF MOSFET is a versatile and reliable component, widely used in high-power applications, and understanding its pinout, operation, and specifications is key to ensuring it performs optimally in your designs.